參數(shù)資料
型號(hào): 2SB1412-TN3-C-R
廠商: 友順科技股份有限公司
英文描述: HIGH VOLTAGE SWITCHING TRANSISTOR
中文描述: 高壓開(kāi)關(guān)晶體管
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 109K
代理商: 2SB1412-TN3-C-R
2SB1412
PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R209-021,A
2 of 5
ABS OLUT E MAX IMUM RAT ING
(Ta=25
°
C , unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
P
D
T
J
T
STG
LIMITS
-30
-20
-6
-5
-10
1
10(T
C
=25
°
C)
+150
-40 ~ +150
UNIT
V
V
V
A
A
W
W
°
C
°
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(PULSE) Single pulse, Pw=10ms
Collector Power Dissipation
Collector Power Dissipation (note2)
Junction Temperature
Storage Temperature
Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.When mounted on a 40*40*0.7mm ceramic board.
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
I
C
/I
B
= -4A/-0.1A
f
T
V
CE
= -6V, I
E
= 50 mA, f=30MHz
Cob
V
CB
= -20V, I
E
= 0 A, f=1MHz
TEST CONDITIONS
A
I
C
= -1mA
I
E
= -50
A
V
CB
= -20V
V
EB
= -5V
V
CE
= -2V,Ic= -0.5A
MIN
-30
-20
-6
82
TYP
120
60
MAX
-0.5
-0.5
390
-1.0
UNIT
V
V
V
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
I
C
= -50
A
A
V
MHz
pF
CLAS S IFICAT ION OF hFE
RANK
RANGE
P
Q
R
82-180
120-270
180-390
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