參數(shù)資料
型號: 2SB1430K
廠商: NEC Corp.
英文描述: 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
中文描述: 5個引腳µ帶看門狗和手動復位的P監(jiān)控電路
文件頁數(shù): 1/6頁
文件大?。?/td> 115K
代理商: 2SB1430K
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D13660EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB1430
PNP SILICON
EPITAXIAL
TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
The 2SB1430 is a Darlington power transistor that can directly
drive from the IC output. This transistor is ideal for motor drivers
and solenoid drivers in such as OA and FA equipment.
In addition, this transistor features a small resin-molded
insulation type package, thus contributing to high-density mounting
and mounting cost reduction.
FEATURES
High h
FE
due to Darlington connection:
h
FE
2,000 (V
CE
= 2 V, I
C
= 2 A)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
5.0
A
Collector current (pulse)
I
C(pulse)
*
10
A
Base current (DC)
I
B(DC)
0.5
A
Total power dissipation
P
T
(T
C
= 25
°
C)
20
W
Total power dissipation
P
T
(T
A
= 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
10 ms, duty cycle
50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
EQUIVALENT CIRCUIT
相關PDF資料
PDF描述
2SB1430L TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 5A I(C) | TO-220VAR
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