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參數(shù)資料
| 型號(hào)： | 2SB1389 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon PNP Triple Diffused |
| 中文描述： | 三重?cái)U(kuò)散硅進(jìn)步黨 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SB1389 |
2SB1389
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
P
C
*
1
Tj
–60
V
Collector to emitter voltage
–60
V
Emitter to base voltage
–7
V
Collector current
–4
A
Collector peak current
–8
A
Collector power dissipation
2
W
25
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
C to E diode forward current
Note:
1. Value at T
C
= 25
°
C.
I
D
*
1
4
A
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–60
—
—
V
I
C
= –0.1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–60
—
—
V
I
C
= –25 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
–7
—
—
V
I
E
= –50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
D
—
—
–10
μ
A
V
CB
= –50 V, I
E
= 0
V
CE
= –50 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –2 A*
1
I
C
= –2 A, I
B
= –4 mA*
1
I
C
= –4 A, I
B
= –40 mA*
1
I
C
= –2 A, I
B
= –4 mA*
1
I
C
= –4 A, I
B
= –40 mA*
1
I
D
= 4 A*
1
—
—
–10
DC current transfer ratio
1000
—
20000
Collector to emitter saturation
—
—
–1.5
V
voltage
—
—
–3.0
Base to emitter saturation
—
—
–2.0
V
voltage
—
—
–3.5
C to E diode forward voltage
Note:
1. Pulse test.
—
—
3.0
V
See switching characteristic curve of 2SB1101.
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PDF描述 |
|---|---|
| 2SB1390 | Silicon PNP Triple Diffused |
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| 2SB1392 | Power Bipolar Transistors |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1390(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1391(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1392-C(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SB1393 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1396S-TD-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 10V 3A SOT89 |
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