參數(shù)資料
型號(hào): 2SA1008M
廠商: NEC Corp.
英文描述: PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
中文描述: PNP硅外延型高速開(kāi)關(guān)晶體管
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 109K
代理商: 2SA1008M
Data Sheet D14866EJ2V0DS
3
2SA1008
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
T
T
Ambient Temperature T
A
(
°
C)
Case Temperature T
C
(
°
C)
Collector to Emitter Voltage V
CE
(V)
C
C
C
C
Pulse Width PW (ns)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
T
t
°
C
C
C
D
2.0 mm aluminum
board, no insulating
board, silicon grease
coating
With infinite heatsink
(T
C
= 25
°
C)
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