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參數(shù)資料
| 型號(hào)： | 2SA1008M |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 中文描述： | PNP硅外延型高速開(kāi)關(guān)晶體管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | 2SA1008M |
Data Sheet D14866EJ2V0DS
2
2SA1008
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Symbol
V
CEO(SUS)
V
CEX(SUS)1
Conditions
MIN.
100
100
TYP.
MAX.
Unit
V
V
Collector to emitter voltage
Collector to emitter voltage
I
C
=
1.0 A, I
B1
=
0.1 A, L = 1 mH
I
C
=
1.0 A, I
B1
=
I
B2
=
0.1 A,
V
BE(OFF)
= 5.0 V, L = 180
μ
H, clamped
I
C
=
2.0 A, I
B1
=
0.2 A, I
B2
= 0.1 A,
V
BE(OFF)
= 5.0 V, L = 180
μ
H, clamped
V
CB
=
100 V, I
E
= 0 A
V
CE
=
100 V, R
BE
= 51
, T
A
= 125
°
C
V
CE
=
100 V, V
BE(OFF)
= 1.5 V
V
CE
=
100 V, V
BE(OFF)
= 1.5 V,
T
A
= 125
°
C
V
EB
=
5.0 V, I
C
= 0 A
V
CE
=
5.0 V, I
C
=
0.1 A
V
CE
=
5.0 V, I
C
=
1.0 A
I
C
=
1.0 A, I
B
=
0.1 A
I
C
=
1.0 A, I
B
=
0.1 A
I
C
=
1.0 A, R
L
= 50
,
I
B1
=
I
B2
=
0.1 A, V
CC
50 V
Refer to the test circuit.
Collector to emitter voltage
V
CEX(SUS)2
100
V
Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current
I
CBO
I
CER
I
CEX1
I
CEX2
10
1.0
10
1.0
μ
A
mA
μ
A
mA
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time
Pulse test PW
≤
350
μ
s, duty cycle
≤
2%
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
t
on
t
stg
t
f
10
μ
A
Note
40
40
Note
200
0.6
1.5
0.5
1.5
0.5
Note
V
V
μ
s
μ
s
μ
s
Note
Note
h
FE
CLASSIFICATION
Marking
h
FE2
M
L
K
40 to 80
60 to 120
100 to 200
SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
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