參數(shù)資料
型號(hào): 2SA1008M
廠商: NEC Corp.
英文描述: PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
中文描述: PNP硅外延型高速開(kāi)關(guān)晶體管
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 109K
代理商: 2SA1008M
Document No. D14866EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1008
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1008 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
FEATURES
Low collector saturation voltage
Fast switching speed
Complementary transistor: 2SC2331
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
Conditions
Ratings
100
100
7.0
2.0
4.0
Unit
V
V
V
A
A
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
PW
300
μ
s,
duty cycle
10%
Base current (DC)
Total power dissipation
I
B(DC)
P
T
1.0
15
1.5
150
A
W
W
°
C
°
C
T
C
= 25
°
C
T
A
= 25
°
C
Junction temperature
Storage temperature
T
j
T
stg
55 to +150
ORDERING INFORMATION
Part No.
Package
TO-220AB
2SA1008
(TO-220AB)
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