參數(shù)資料
型號: 2N6660
廠商: SUPERTEX INC
元件分類: 小信號晶體管
英文描述: N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述: 410 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
封裝: TO-39, 3 PIN
文件頁數(shù): 4/5頁
文件大?。?/td> 56K
代理商: 2N6660
2N6660, VQ1004J/P
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70222
S-04379
Rev. E, 16-Jul-01
Threshold Region
Capacitance
Gate Charge
Load Condition Effects on Switching
N
T
t
1
Square Wave Pulse Duration (sec)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
V
GS
Gate-to-Source Voltage (V)
Q
g
Total Gate Charge (pC)
10
1
0.01
0.5
0.1
1.0
1.5
2.0
V
DS
= 5 V
25 C
55 C
125 C
T
J
= 150 C
C
oss
120
100
80
0
0
10
50
60
40
20
30
40
20
C
iss
C
rss
V
GS
= 0 V
f = 1 MHz
15.0
12.5
10.0
0
0
100
600
7.5
5.0
200
300
400
2.5
500
I
D
= 1.0 A
V
DS
= 30 V
48 V
0.1
1
10
100
10
1
50
20
5
2
V
DD
= 25 V
R
G
= 25
V
GS
= 0 to 10 V
t
d(off)
t
r
t
d(on)
t
f
0.1
10 K
1.0
0.01
0.1
1.0
100
10
1 K
Normalized Effective Transient Thermal Impedance, Junction-to-Case (TO-205AD)
1. Duty Cycle, D =
2. Per Unit Base = R
thJC
= 20 C/W
3. T
JM
T
C
= P
DM
Z
thJC(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
0.01
I
D
C
V
G
t
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