參數(shù)資料
型號: 2N6660
廠商: SUPERTEX INC
元件分類: 小信號晶體管
英文描述: N-Channel Enhancement-Mode Vertical DMOS FETs
中文描述: 410 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
封裝: TO-39, 3 PIN
文件頁數(shù): 3/5頁
文件大小: 56K
代理商: 2N6660
2N6660, VQ1004J/P
Vishay Siliconix
Document Number: 70222
S-04379
Rev. E, 16-Jul-01
www.vishay.com
11-3
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
V
GS
Gate-Source Voltage (V)
V
GS
Gate-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
V
DS
Drain-to-Source Voltage (V)
I
D
Drain Current (A)
T
J
Junction Temperature ( C)
2.0 V
100
0
0.4
0.8
1.2
1.6
2.0
80
60
40
20
0
2.8 V
2.6 V
2.4 V
2.2 V
V
GS
= 10 V
2.0
0
1
2
3
4
5
1.6
1.2
0.8
0.4
0
V
GS
= 10 V
8 V
7 V
6 V
5 V
4 V
3 V
2 V
1.0
0.8
0.6
0
0
2
10
0.4
0.2
4
6
8
125 C
25 C
V
DS
= 15 V
T
J
=
55 C
2.8
0
4
8
12
16
20
2.4
2.0
1.6
0
1.2
0.8
0.4
1.0 A
0.5 A
I
D
= 0.1 A
2.5
2.0
1.5
0
0
0.4
2.0
1.0
0.5
0.8
1.2
1.6
VGS= 10 V
2.25
2.00
1.75
0.50
50
10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= 10 V
I
D
= 1.0 A
0.2 A
1.8 V
I
D
I
D
I
D
r
D
r
D
r
D
(
N
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