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參數(shù)資料
| 型號： | 2N6660 |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 410 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 |
| 封裝： | TO-39, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 2N6660 |
2N6660, VQ1004J/P
Vishay Siliconix
www.vishay.com
11-2
Document Number: 70222
S-04379
—
Rev. E, 16-Jul-01
Limits
2N6660
VQ1004J/P
Parameter
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Unit
Static
Drain-Source
Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 10 A
75
60
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
1.7
0.8
2
0.8
2.5
V
DS
= 0 V, V
GS
=
15 V
100
100
Gate-Body Leakage
I
GSS
T
C
= 125 C
500
500
nA
V
DS
= 60 V, V
GS
= 0 V
10
V
DS
= 35 V, V
GS
= 0 V
Zero Gate
Voltage Drain Current
V
DS
= 48 V, V
GS
= 0 V
1
I
DSS
T
C
= 125 C
500
500
A
V
DS
= 28 V, V
GS
= 0 V
T
C
= 125 C
On-State Drain Current
b
I
D(on)
V
DS
= 10 V, V
GS
= 10 V
3
1.5
1.5
A
V
GS
= 5 V, I
D
= 0.3 A
d
2
5
5
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
=
1
A
1.3
3
3.5
T
C
= 125 C
d
2.4
4.2
4.9
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.5 A
350
170
170
Common Source
Output Conductance
b
g
os
V
DS
= 10 V, I
D
= 0.1 A
1
mS
Diode Forward Voltage
V
SD
I
S
= 0.99 A, V
GS
= 0 V
0.8
V
Dynamic
Input Capacitance
C
iss
35
50
60
Output Capacitance
C
oss
V
DS
= 24 V, V
GS
= 0 V
f = 1 MHz
25
40
50
Reverse Transfer Capacitance
C
rss
7
10
10
pF
Drain-Source Capacitance
C
ds
30
40
Switching
c
Turn-On Time
t
ON
V
DD
=
25
V, R
L
= 23
I
D
1 A, V
= 10 V
R
G
= 25
8
10
10
Turn-Off Time
t
OFF
8.5
10
10
ns
Notes
a.
b.
c.
d.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
80 s duty cycle
Switching time is essentially independent of operating temperature.
This parameter not registered with JEDEC on 2N6660.
VNDQ06
1%.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6660 | 制造商:SOLID STATE 功能描述:MOSFET, N CH, 60V, 1.7A, TO-39 |
| 2N6660_07 | 制造商:SUPERTEX 制造商全稱:SUPERTEX 功能描述:N-Channel Enhancement-Mode Vertical DMOS FETs |
| 2N6660_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60 V (D-S) MOSFET |
| 2N6660-2 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 60V 1.1A 3PIN TO-205AD - Bulk |
| 2N6660C4 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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