
AMIS-30600 LIN Transceiver
Data Sheet
6.2 Operating Range
Table 5: Operating Range
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply voltage
4.75
+5.25
V
VBB
Battery supply voltage
7.3
+18
V
Tjunc
Maximum junction temperature
-40
+150
°C
Tjsd
Thermal shutdown temperature
+150
+170
+190
°C
Rthj-a
Thermal resistance junction to ambient
185
°C/W
6.3 DC Electrical Characteristics
VCC = 4.75 to 5.25V; VBB = 7.3 to 18V; VEN > VEN,on ; Tamb = -40 to +125°C; RL = 500 unless specified otherwise. All voltages with
respect to ground; positive current flowing into pin; unless otherwise specified.
Table 6: DC Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Supply (pin VCC and pin VBB)
ICC
5V supply current
Dominant; VTxD =0V
Recessive; VTxD =VCC
400
250
700
500
A
IBB
Battery supply current
Dominant; VTxD =0V
Recessive; VTxD =VCC
1
100
1.5
200
mA
A
IBB
Battery supply current
Sleep mode; VINH = 0V
35
55
A
ICC
5V supply current
Sleep mode; VINH = 0V
0.25
1
A
Transmitter Data Input (pin TxD)
VIH
High-level input voltage
Output recessive
0.7 x VCC
-
VCC
V
VIL
Low-level input voltage
Output dominant
0
-
0.3 x VCC
V
RTxD,pu
Pull-up resistor to Vcc
24
60
k
Receiver Data Output (pin RxD)
VOH
High-level output voltage
IRXD = -10mA
0.8 x VCC
VCC
V
VOL
Low-level output voltage
IRXD = 5mA
0
0.2 x VCC
V
Enable Input (pin EN)
VEN,on
High-level input voltage
Normal mode
0.7 x VCC
-
VCC
V
VEN,off
Low-level input voltage
Low power mode
0
-
0.3 x VCC
V
REN,pd
Pull-down resistor to GND
6
10
15
k
Inhibit Output (pin INH)
VINH,d
High-level voltage drop: VINH,d = VBB - VINH
IINH = - 0.15mA
0.5
1.0
V
IINH,lk
Leakage current
Sleep mode; VINH = 0V
-5.0
-
5.0
A
Bus Line (pin LIN)
Vbus,rec
Recessive bus voltage at pin LIN
VTxD =VCC
0.9 x VBB
-
VBB
V
Vbus,dom
Dominant output voltage at pin LIN
VTxD = 0V
VTxD = 0V; Ibus = 40mA
0
-
0.15 x VBB
1.4
V
Ibus,sc
Bus short circuit current
Vbus,short = 18V
40
85
130
mA
Ibus,lk
Bus leakage current
VCC=VBB=0V; Vbus=8V
VCC=VBB=0V; Vbus=20V
-400
-200
5
20
A
Rbus
Bus pull-up resistance
VTxD = 0V
20
30
47
k
Vbus,rd
Receiver threshold: recessive to dominant
0.4 x VBB
0.48 x VBB
0.6 x VBB
V
Vbus,dr
Receiver threshold: dominant to recessive
0.4 x VBB
0.52 x VBB
0.6 x VBB
V
Vq
Receiver hysteresis
Vbus,hys=Vbus,rec-Vbus,dom
0.05 x VBB
0.04 x VBB
0.175 x VBB
V
VWAKE
Wake-up threshold voltage
0.4 x VBB
0.6 x VBB
V
AMI Semiconductor
– Rev. 2.0, Apr. 2005
5
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