參數(shù)資料
型號(hào)： XSD56120
廠商： 意法半導(dǎo)體
英文描述： RF POWER TRANSISTORS RF POWER TRANSISTORS
中文描述： RF功率晶體管射頻功率晶體管
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 43K
代理商： XSD56120
SD56120
RF POWER TRANSISTORS
The LdmoSTFAMILY
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
I
EXCELLENT THERMAL STABILITY
I
COMMON SOURCE CONFIGURATION,
PUSH-PULL
I
P
OUT
= 100 W PEP WITH 13 dB GAIN @ 860
MHz
I
BeO FREE PACKAGE
DESCRIPTION
The SD56120 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD56120 is designed for high gain
and
broadband
performance
common source mode at 28V. It is ideal for
broadcast applications from 470 to 860 MHz
requiring high linearity.
operating
in
PIN CONNECTION
November 1999
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
o
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
T
j
T
STG
Parameter
Value
65
±
20
14
260
200
-65 to 150
Unit
V
V
A
W
o
C
o
C
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc= 70
o
C)
Max. Operating Junction Temperature
Storage Temperature
THERMAL DATA
R
th(j-c)
Junction-Case Thermal Resistance
0.5
o
C/W
M246
epoxy sealed
ORDER CODE BRANDING
SD56120 XSD56120
1. Drain 4. Gate
2. Drain 5. Gate
3. Source
1/4
相關(guān)PDF資料
PDF描述
XSD57030-01 RF POWER TRANSISTORS The LdmoSTFAMILY
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
XSD57030-01 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS The LdmoSTFAMILY
XSD57120 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF POWER TRANSISTORS The LdmoSTFAMILY
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