參數(shù)資料
型號: XP1003
廠商: Mimix Broadband, Inc.
英文描述: 27.0-35.0 GHz GaAs MMIC Power Amplifier
中文描述: 27.0-35.0 GHz的砷化鎵單片功率放大器
文件頁數(shù): 4/6頁
文件大?。?/td> 1576K
代理商: XP1003
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
27.0-35.0 GHz GaAs MMIC
Power Amplifier
Page 4 of 6
App Note [1] Biasing
-
It is recommended to separately bias the upper and lower amplifiers at Vd(1,2)=4.5V Id(1+2)=220mA, and
Vd(3,4)=4.5V Id(3+4)=220mA, although best performance will result in separately biasing Vd1 through Vd4, with Id1=Id3=110mA,
Id2=Id4=110mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary;
this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias
circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to
sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate
voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to
sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] On-board Detector
-
The output signal of the power amplifier is coupled via a 15dB directional coupler to a detector,
which comprises a diode connected to the signal path, and a second diode used to provide a temperature compensation signal. The
common bias terminal is Vin, and is nominally set to forward bias both diodes. The bias is normally provided in 1 of 2 ways. The Vin
port can be connected directly to a 1V bias, and given the internal series resistance, results in about 1mA of bias current. Alternatively,
Vin can be tied to the same voltage as Vd1-Vd4 through an external series resistor Rin in the range 3 - 6k
.
App Note [3] Bias Arrangement
-
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC
bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4) needs to have DC
bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also
recommended.
MTTF Table
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
117 deg Celsius
141.3 deg Celsius
165.2 deg Celsius
FITs
4.26E-01
6.40E+00
6.85E+01
MTTF Hours
2.35E+09
1.56E+08
1.46E+07
Rth
31.3
°
C/W
33.5
°
C/W
35.5
°
C/W
Bias Conditions:
Vd1=Vd2=Vd3=Vd4=4.5V, Id1=Id2=Id3=Id4=110 mA
P1003
May 2005 - Rev 05-May-05
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XP1003-BD 制造商:MIMIX 制造商全稱:MIMIX 功能描述:27.0-35.0 GHz GaAs MMIC
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