參數(shù)資料
型號: XP05531
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon NPN epitaxial planer transistor
中文描述: 2 CHANNEL, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: SMINI6-G1, 6 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 32K
代理商: XP05531
1
Composite Transistors
XP05531
Silicon NPN epitaxial planer transistor
For high frequency, oscillation and mixing
I
Features
G
High transition frequency f
T
.
G
Small collector output capacitance C
ob
and reverse transfer ca-
pacitance C
rb
.
G
Two elements incorporated into one package.
I
Basic Part Number of Element
G
2SC3130
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
5M
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
15
V
Collector to emitter voltage
10
V
Emitter to base voltage
3
V
Collector current
50
mA
Total power dissipation
150
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to emitter voltage
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 4V, I
C
= 5mA
V
CE
= 4V, I
C
= 100
μ
A
V
CE
= 4V, I
C
= 5mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 4V, I
E
= –5mA, f = 200MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= –5mA, f = 31.9MHz
10
V
Emitter to base voltage
3
V
Collector cutoff current
1
μ
A
μ
A
10
Forward current transfer ratio
75
400
h
FE2
/h
FE1
ratio
h
FE2
/h
FE1
0.75
1.6
Collector to emitter saturation voltage
V
CE(sat)
f
T
C
ob
C
rb
r
bb
.C
C
0.5
V
Transition frequency
1.4
1.9
2.5
GHz
Collector output capacitance
0.9
1.1
pF
Common base reverse transfer capacitance
0.25
0.35
pF
Collector to base parameter
11.8
13.5
ps
1
6
5
Tr2
Tr1
2
3
4
1 : Emitter (Tr1)
2 : Base (Tr1)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Emitter (Tr2)
6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
2.1
±
0.1
0
±
0
0
0
2
±
0
0
±
0
0
1.25
±
0.1
0.425
0.425
1
2
3
6
5
4
0.2
±
0.1
0
±
0
0
0
+
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