參數(shù)資料
型號(hào)： XN5601
廠商： PANASONIC CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： Silicon PNP epitaxial planer transistor
中文描述： 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN
文件頁(yè)數(shù)： 4/5頁(yè)
文件大?。?/td> 60K
代理商： XN5601
4
Composite Transistors
XN5601
f
T
— I
E
C
ob
— V
CB
NF — I
E
NF — I
E
h Parameter — I
E
h Parameter — V
CE
Characteristics charts of Tr2
I
C
— V
CE
I
B
— V
BE
I
C
— V
BE
0
0.1
0.3
Emitter current I
E
(mA)
40
80
120
160
140
100
60
20
1
3
10
30
100
T
T
V
CB
=–10V
Ta=25C
0
–1
–5
–20
–2
8
7
6
5
4
3
2
1
–3
–50
–10
–30
–100
C
o
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
0
0.03
Emitter current I
E
(mA)
6
5
4
3
2
1
0.1
0.3
1
3
10
N
V
CB
=–5V
f=1kHz
R
g
=2k
Ta=25C
0
0.1
20
2
18
4
6
8
10
12
14
16
0.3
1
3
10
2
0.5
0.2
Emitter current I
E
(mA)
5
N
V
CB
=–5V
R
g
=50k
Ta=25C
f=100Hz
10kHz
1kHz
1
0.1
2
3
5
10
20
30
50
100
200
300
0.3
1
3
10
2
0.5
0.2
Emitter current I
E
(mA)
5
P
V
CE
=–5V
f=270Hz
Ta=25C
h
fe
h
oe
(
μ
S)
h
ie
(k
)
h
re
(
×
10
–4
)
1
0.1
2
3
5
10
20
30
50
100
200
300
0.3
1
3
10
2
0.5
0.2
5
P
Collector to emitter voltage V
CE
(V)
I
E
=2mA
f=270Hz
Ta=25C
h
fe
h
oe
(
μ
S)
h
ie
(k
)
h
re
(
×
10
–4
)
0
0
10
2
4
8
6
60
50
40
30
20
10
Collector to emitter voltage V
CE
(V)
C
C
Ta=25C
I
B
=160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
20
μ
A
0
0
1.0
0.8
0.6
0.4
0.2
1200
1000
800
600
400
200
Base to emitter voltage V
BE
(V)
B
B
μ
A
V
CE
=10V
Ta=25C
0
0
2.0
1.6
1.2
0.8
0.4
240
200
160
120
80
40
Base to emitter voltage V
BE
(V)
C
C
V
CE
=10V
Ta=75C
–25C
25C
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