參數(shù)資料
型號(hào)： XN5601
廠商： PANASONIC CORP
元件分類： 小信號(hào)晶體管
英文描述： Silicon PNP epitaxial planer transistor
中文描述： 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, MINI6-G1, SC-74, 6 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 60K
代理商： XN5601
2
Composite Transistors
I
Electrical Characteristics
(Ta=25C)
G
Tr1
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
V
CE
= –10V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–60
V
Collector to emitter voltage
–50
V
Emitter to base voltage
–7
V
Collector cutoff current
– 0.1
μ
A
μ
A
–100
Forward current transfer ratio
160
460
Collector to emitter saturation voltage
– 0.3
– 0.5
V
Transition frequency
80
MHz
Collector output capacitance
2.7
pF
G
Tr2
XN5601
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
60
V
Collector to emitter voltage
50
V
Emitter to base voltage
7
V
Collector cutoff current
0.1
μ
A
μ
A
100
Forward current transfer ratio
160
460
Collector to emitter saturation voltage
0.1
0.3
V
Transition frequency
150
MHz
Collector output capacitance
3.5
pF
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