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參數(shù)資料
| 型號： | XN01119 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer transistor |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI5-G1, SC-74A, 5 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 57K |
| 代理商： | XN01119 |
1
Composite Transistors
XN01119
(XN1119)
Silicon PNP epitaxial planer transistor
For switching/digital circuits
I
Features
G
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
UNR1119(UN1119)
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
1 : Collector (Tr1)
2 : Collector (Tr2)
3 : Base (Tr2)
4 : Emitter
5 : Base (Tr1)
EIAJ : SC–74A
Mini5-G1 Pakage
Unit: mm
Marking Symbol:
7P
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
–50
V
Collector to emitter voltage
–50
V
Collector current
–100
mA
Total power dissipation
300
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
2.90
±0.1
(0.1.9
0.16
+0.10
2
+
–
1
+
–
1
0
+
–
1
(
0
±
+
–
0.30
+0.10
5
4
3
1
2
+0.20
5
10
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
V
EB
= –6V, I
C
= 0
V
CE
= –10V, I
C
= –5mA
V
CE
= –10V, I
C
= –5mA
I
C
= –10mA, I
B
= – 0.3mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1k
V
CC
= –5V, V
B
= –2.5V, R
L
= 1k
V
CB
= –10V, I
E
= 1mA, f = 200MHz
–50
V
Collector to emitter voltage
–50
V
Collector cutoff current
– 0.1
μ
A
μ
A
– 0.5
Emitter cutoff current
– 1.5
mA
Forward current transfer ratio
30
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
V
CE(sat)
V
OH
V
OL
f
T
R
1
R
1
/R
2
0.5
0.99
Collector to emitter saturation voltage
– 0.25
V
Output voltage high level
–4.9
V
Output voltage low level
– 0.2
V
Transition frequency
80
MHz
Input resistance
–30%
1
+30%
k
Resistance ratio
0.08
0.1
0.12
*1
Ratio between 2 elements
5
1
Tr2
Tr1
4
3
2
Note) The Part number in the Parenthesis shows conventional part number.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| XN01119(XN1119) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:XN01119 (XN1119) - Composite Transistors |
| XN0111900L | 功能描述:TRANS ARRAY PNP/PNP W/RES MINI5P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:1 個(gè) NPN，1 個(gè) PNP - 預(yù)偏壓式（雙） 電流 - 集電極 (Ic)（最大）:70mA，100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k，2.2k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz，200MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000784046 |
| XN0111F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-74A |
| XN0111F(XN111F) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Composite Transistors |
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