參數(shù)資料
型號： XCF32PVO48C
廠商： XILINX INC
元件分類： DRAM
英文描述： Platform Flash In-System Programmable Configuration PROMS
中文描述： 32M X 1 CONFIGURATION MEMORY, PDSO48
封裝： PLASTIC, TSOP-48
文件頁數(shù)： 26/46頁
文件大?。?/td> 525K
代理商： XCF32PVO48C
Platform Flash In-System Programmable Configuration PROMS
DS123 (v2.9) May 09, 2006
www.xilinx.com
26
R
DC Characteristics Over Operating Conditions
Symbol
Description
XCF01S, XCF02S,
XCF04S
Test
Conditions
XCF08P, XCF16P,
XCF32P
Test
Conditions
Units
Min
Max
Min
Max
V
OH
High-level output voltage for 3.3V outputs
I
OH
= –4 mA
2.4
–
I
OH
= –4 mA
2.4
–
V
High-level output voltage for 2.5V outputs
I
OH
= –500
μ
A
V
– 0.4
–
I
OH
= –500
μ
A
V
– 0.4
–
V
High-level output voltage for 1.8V outputs
I
OH
= –50
μ
A
V
– 0.4
–
I
OH
= –50
μ
A
V
– 0.4
–
V
High-level output voltage for 1.5V outputs
–
–
–
I
OH
= TBD
I
OL
= 4 mA
I
OL
= 500
μ
A
I
OL
= 50
μ
A
I
OL
= TBD
33 MHz
TBD
–
V
V
OL
Low-level output voltage for 3.3V outputs
I
OL
= 4 mA
I
OL
= 500
μ
A
I
OL
= 50
μ
A
–
–
0.4
–
0.4
V
Low-level output voltage for 2.5V outputs
–
0.4
–
0.4
V
Low-level output voltage for 1.8V outputs
–
0.4
–
0.4
V
Low-level output voltage for 1.5V outputs
–
–
–
TBD
V
I
CCINT
Internal voltage supply current, active mode
33 MHz
–
10
–
10
mA
I
CCO(1)
Output driver supply current, active serial mode
33 MHz
–
10
33 MHz
–
10
mA
Output driver supply current, active parallel mode
–
–
–
33 MHz
–
40
mA
I
CCJ
I
CCINTS
I
CCOS
I
CCJS
JTAG supply current, active mode
Note (2)
–
5
Note (2)
–
5
mA
Internal voltage supply current, standby mode
Note (3)
–
5
Note (3)
–
1
mA
Output driver supply current, standby mode
Note (3)
–
1
Note (3)
–
1
mA
JTAG supply current, standby mode
Note (3)
–
1
Note (3)
–
1
mA
I
ILJ
JTAG pins TMS, TDI, and TDO pull-up current
V
CCJ
= max
V
IN
= GND
V
CCINT
= max
V
CCO
= max
V
IN
= GND or
V
CCO
V
CCINT
= max
V
CCO
= max
V
IN
= GND or
V
CCO
–
100
V
CCJ
= max
V
IN
= GND
V
CCINT
= max
V
CCO
= max
V
IN
= GND or
V
CCO
V
CCINT
= max
V
CCO
= max
V
IN
= GND or
V
CCO
V
CCINT
= max
V
CCO
= max
V
IN
= GND or
V
CCO
V
CCINT
= max
V
CCO
= max
V
IN
= GND or
V
CCO
V
= GND
f = 1.0 MHz
–
100
μ
A
I
IL
Input leakage current
–10
10
–10
10
μ
A
I
IH
Input and output High-Z leakage current
–10
10
–10
10
μ
A
I
ILP
Source current through internal pull-ups on
EN_EXT_SEL, REV_SEL0, REV_SEL1
–
–
–
–
100
μ
A
I
IHP
Sink current through internal pull-down on BUSY
–
–
–
-100
–
μ
A
C
IN
Input capacitance
V
= GND
f = 1.0 MHz
–
8
–
8
pF
C
OUT
Output capacitance
V
= GND
f = 1.0 MHz
–
14
V
= GND
f = 1.0 MHz
–
14
pF
Notes:
1.
2.
3.
Output driver supply current specification based on no load conditions.
TDI/TMS/TCK non-static (active).
CE High, OE Low, and TMS/TDI/TCK static.
相關PDF資料
PDF描述
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相關代理商/技術參數(shù)
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