參數(shù)資料
型號(hào)： X3100
英文描述： Reed Relay; Contacts:SPST; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carry Current:1A; Coil Voltage DC Max:5V; Relay Terminals:DIP-14; Relay Mounting:PC Board; Contact Carrying Power:10W
中文描述： 3或4芯鋰離子電池保護(hù)和監(jiān)控器IC
文件頁(yè)數(shù)： 23/40頁(yè)
文件大?。?/td> 249K
代理商： X3100
X3100/X3101 – Preliminary Information
Characteristics subject to change without notice.
23 of 40
REV 1.1.8 12/10/02
www.xicor.com
Write Enable/Write Disable (WREN/WRDI)
Any write to a nonvolatile array or register, requires the
WREN command be sent prior to the write command.
This command sets an internal latch allowing the write
operation to proceed. The WRDI command resets the
internal latch if the system decides to abort a write
operation. See Figure 11.
Figure 11. EEPROM Write Enable Latch (WREN/WRDI) Operation Sequence
Table 30. X3100/X3101 Instruction Set
Instruction
Name
WREN
WRDI
EEWRITE
EEREAD STAT
EEREAD
Instruction
Format*
0000 0110
0000 0100
0000 0010
0000 0101
0000 0011
Description
Set the write enable latch (write enable operation)—Figure 11
Reset the write enable latch (write disable operation)—Figure 11
Write command followed by address/data (4kbit EEPROM)—Figure 12, Figure 13
Reads IDLock settings & status of EEPROM EEWRITE instruction—Figure 14
Read operation followed by address (for 4kbit EEPROM)—Figure 15
Write to configuration register followed by two bytes of data—Figure 4, Figure 16.
Data stored in SRAM only and will power-up to previous settings—Figure 3
Write to control register, followed by two bytes of data—Figure 17
Read contents of status register—Figure 18
Set EEPROM ID lock partition followed by partition byte—Figure 19
*Instructions have the MSB in leftmost position and are transferred MSB first.
WCFIG
0000 1001
WCNTR
RDSTAT
SET IDL
0000 1010
0000 1011
0000 0001
0
1
2
3
4
5
6
7
CS
SI
SCK
High Imped
ance
SO
Instruction
(1 Byte)
WREN
WRDI
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