參數(shù)資料
型號(hào): WV3HG128M72AER403AD6EG
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
封裝: ROHS COMPLIANT, DIMM-240
文件頁(yè)數(shù): 10/12頁(yè)
文件大?。?/td> 157K
代理商: WV3HG128M72AER403AD6EG
WV3HG128M72AER-AD6
ADVANCED
7
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
October 2006
Rev. 2
DDR2 ICC SPECIFICATIONS AND CONDITIONS
VCC = +1.8V ± 0.1V
Symbol
Proposed Conditions
534
403
Units
ICC0
Operating one bank active-precharge current;
tCK = tCK(ICC), tRC = tRC(ICC), tRAS = tRASmin(ICC); CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
2,390
2,120
mA
ICC1
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRC = tRC (ICC), tRAS = tRASmin(ICC), tRCD = tRCD(ICC);
CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is
same as IDAD6W
2,660
2,390
mA
ICC2P
Precharge power-down current;
All banks idle; tCK = tCK(ICC); CKE is LOW; Other control and address bus inputs are STABLE; Data bus
inputs are FLOATING
680
644
mA
ICC2Q
Precharge quiet standby current;
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
950
860
mA
ICC2N
Precharge standby current;
All banks idle; tCK = tCK(ICC); CKE is HIGH, CS# is HIGH; Other control and address bus inputs are
SWITCHING; Data bus inputs are SWITCHING
1,040
950
mA
ICC3P
Active power-down current;
All banks open; tCK = tCK(ICC); CKE is LOW; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0
1,220
1,130
mA
Slow PDN Exit MRS(12) = 1
950
860
mA
ICC3N
Active standby current;
All banks open; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
1,670
1,580
mA
IDAD6W
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS = tRASmax(ICC), tRP
= tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are SWITCHING; Data
bus inputs are SWITCHING
3,560
3,020
mA
IDAD6R
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = 0; tCK = tCK(ICC), tRAS =
tRASmax(ICC), tRP = tRP(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address bus inputs are
SWITCHING; Data pattern is same as IDAD6W
3,560
3,020
mA
ICC5B
Burst auto refresh current;
tCK = tCK(ICC); Refresh command at every tRFC(ICC) interval; CKE is HIGH, CS# is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
5,000
4,640
mA
ICC6
Self refresh current;
CK and CK# at 0V; CKE 0.2V; Other control and address bus inputs
are FLOATING; Data bus inputs are FLOATING
108
mA
ICC7
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(ICC), AL = tRCD(ICC)-1*tCK(ICC); tCK = tCK(ICC), tRC =
tRC(ICC), tRRD = tRRD(ICC), tRCD = 1*tCK(ICC); CKE is HIGH, CS# is HIGH between valid commands; Address
bus inputs are STABLE during DESELECTs; Data pattern is same as IDAD6R; Refer to the following page for
detailed timing conditions
5,900
5,540
mA
Note: ICC specication is based on
ELPIDA components. Other DRAM Manufacturers specication may be different.
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