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參數(shù)資料
| 型號： | WF512K32-120G4TC5 |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | PROM |
| 英文描述： | 512K X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68 |
| 封裝： | 40 MM, 3.50 MM HEIGHT, CERAMIC, QFP-68 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 566K |
| 代理商： | WF512K32-120G4TC5 |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WF512K32-XXX5
March 2006
Rev. 11
Absolute Maximum Ratings (1)
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and
affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,inputs
may overshoot Vss to -2.0 V for periods of up to 20ns. Maximum DC voltage on
output and I/O pins is Vcc + 0.5V. During voltage transitions, outputs may overshoot
to Vcc + 2.0 V for periods of up to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may
overshoot Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is
+13.5V which may overshoot to 14.0 V for periods up to 20ns.
Parameter
Unit
Operating Temperature
-55 to +125
°C
Supply Voltage Range (VCC)
-2.0 to +7.0
V
Signal voltage range (any pin except A9) (2)
-2.0 to +7.0
V
Storage Temperature Range
-65 to +150
°C
Lead Temperature (soldering, 10 seconds)
+300
°C
Data Retention (Mil Temp)
20 years
Endurance - write/erase cycles (Mil Temp)
1,000,000 cycles min.
A9 Voltage for sector protect (VID) (3)
-2.0 to +14.0
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.0
VCC + 0.5
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
A9 Voltage for Sector Protect
VID
11.5
12.5
V
CAPACITANCE
TA = +25°C
Parameter
Symbol
Conditions
Max Unit
OE# capacitance
COE
VIN = 0V, f = 1.0 MHz
50
pF
WE1-4# capacitance
HIP (PGA)
CWE
VIN = 0V, f = 1.0 MHz
20
pF
CQFP G4T
50
CQFP G2U/G2L
15
CS1-4# capacitance
CCS
VIN = 0V, f = 1.0 MHz
20
pF
Data# I/O capacitance
CI/O
VI/O = 0V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter
Sym
Conditions
Min
Max
Units
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
μA
Output Leakage Current
ILOx32
CS# = VIH, OE# = VIH, VOUT = GND to VCC
10
μA
VCC Active Current for Read (1)
ICC1
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5
190
mA
VCC Active Current for Program or Erase (2)
ICC2
CS# = VIH, OE# = VIH
240
mA
VCC Standby Current
ICC4
VCC = 5.5, CS = VIH, f = 5MHz
6.5
mA
VCC Static Current
ICC3
VCC = 5.5, CS = VIH
0.6
mA
Output Low Voltage
VOL
IOL = 8.0mA, VCC = 4.5
0.45
V
Output High Voltage
VOH1
IOH = 2.5mA, VCC = 4.5
0.85 X VCC
V
Low VCC Lock-Out Voltage
VLKO
3.2
4.2
V
DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component
(at 5 MHz). The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
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