參數(shù)資料
型號: WEDPN8M72V-125BI
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 8M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, PBGA219
封裝: 32 X 25 MM, PLASTIC, BGA-219
文件頁數(shù): 5/15頁
文件大?。?/td> 188K
代理商: WEDPN8M72V-125BI
13
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WEDPN8M72V-XBX
Document Title
8M x 72 Synchronous DRAM
Revision History
Rev # History
Release Date
Status
Rev 0
Initial Release
November 1999
Preliminary
Rev 1
Changes (Pg. 1, 12)
December 1999
Preliminary
1.1
Change package dimensions from 35mm x 25mm to
32mm x 25mm
Rev 2
Changes (Pg. 1, 8, 9, 10, 11, 12)
January 2000
Preliminary
1.1
Change 125MHz to Commercial Temperature Only
1.2
Delete references to 64ms Refresh Period
1.3
Change capacitance
1.3.1
CI1 from 3.5pF to 10pF
1.3.2
CA from 20pF to 35pF
1.3.3
CI2 from 3.8pF to 10pF
1.3.4
CIO from 6.0pF to 12pF
1.4
Delete Icc2, Icc5, and Icc6 from Icc Specifications
And Conditions Table
1.5
Change Refresh Period for Military Temperature to 16ms
1.6
Delete ‘Vcc= +3.3V’ and ‘pin under test biased at 1.4V’
In Note 2
1.7
Delete ‘a(chǎn)nd the pulse width cannot be greater than
one third of the cycle rate’ from Note 21
1.8
Change Ball Diameter from 0.65mm to 0.835mm
1.9
Change Height to 2.20mm Maximum
1.10
Change side view of solder balls on package
1.11
Change Write recovery time (tWR) to 15ns for 125MHz
Rev 3
Changes (Pg. 1, 12)
February 2000
Preliminary
1.1
Delete Commercial Temperature Only from 125MHz
Rev 4
Changes (Pg. 1)
April 2000
Preliminary
1.1
Add Weight of 2.5 grams typical
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