參數(shù)資料
型號: VSKU105/12S90P
廠商: VISHAY INTERTECHNOLOGY INC
元件分類: 晶閘管
英文描述: 165 A, 1200 V, SCR, TO-240AA
封裝: ROHS COMPLIANT, ADD-A-PAK-7
文件頁數(shù): 6/8頁
文件大?。?/td> 163K
代理商: VSKU105/12S90P
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 94423
6
Revision: 24-Apr-08
VSKU/V105..PbF Series
Vishay High Power Products
Thyristor/Thyristor, 105 A
(ADD-A-PAKTM Generation 5 Power Modules)
Fig. 10 - Current Ratings Characteristics
Fig. 11 - Current Ratings Characteristics
Fig. 12 - Thermal Impedance ZthJC Characteristics
Fig. 13 - Gate Characteristics
100
200
300
400
500
600
700
10
20
30
40
50
60
70
80
90 100
100 A
50 A
Rate Of Fall Of On-state Current - di/ dt (A/ s)
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
h
a
rg
e
-
Q
rr
(C
)
I
= 200 A
TM
20 A
10 A
VSK.105.. Series
T = 125 °C
J
20
40
60
80
100
120
140
10
20
30
40
50
60
70
80
90 100
M
a
x
im
u
m
R
e
v
e
rs
e
R
e
c
o
v
e
ry
C
u
rr
e
n
t-
Ir
r
(A
)
Rate Of Fall Of Forward Current - di/ dt (A/ s)
100 A
50 A
I
= 200 A
TM
20 A
10 A
VSK.105.. Series
T = 125 °C
J
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
Tr
a
n
si
e
n
t
Th
e
rm
a
lI
m
p
e
d
a
n
c
e
Z
(K
/W
)
VSK.105.. Series
Per Junc tion
Steady State Value:
R
= 0.27 K/ W
(DC Operation)
thJC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
(b )
(a)
(4)
(3) (2)
(1)
Instantaneous Gate Current (A)
In
st
an
ta
n
e
ou
sG
a
te
V
o
lt
ag
e
(V
)
TJ
=
-4
0
°C
TJ
=
2
5
°C
TJ
=
12
5
°C
a)Rec ommended load line for
b)Rec ommended load line for
VGD
IGD
Frequenc y Limited by PG(AV)
(1) PGM = 200 W, tp = 300 s
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
<= 30%rated di/ dt: 15 V, 40 ohms
tr = 1 s, tp >= 6 s
rated di/d t: 20 V, 20 ohms
tr = 0.5 s, tp >= 6 s
Rec tangular gate pulse
VSK.105.. Series
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