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參數(shù)資料
| 型號(hào)： | VP2450ND |
| 廠商： | SUPERTEX INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FETs |
| 中文描述： | 500 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | DIE |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 95K |
| 代理商： | VP2450ND |
2
Thermal Characteristics
Package
I
D
(continuous)*
I
D
(pulsed)
Power Dissipation
@ T
C
= 25
°
C
1W
θ
jc
°
C/W
125
θ
ja
°
C/W
170
I
DR
*
I
DRM
TO-92
-0.1A
-0.3A
-0.1A
-0.3A
TO-243AA
*
I
(continuous) is limited by max rated T
.
Mounted on FR5 Board. 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
-0.16A
-0.80A
1.6W
15
78
-0.16A
-0.80A
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
Electrical Characteristics
(@ 25
°
C unless otherwise specified)
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BV
DSS
-500
V
GS(th)
V
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
-1.5
-3.5
V
V
GS
= V
DS
, I
D
= -1mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
=
±
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125
°
C
V
GS
= -4.5V, V
DS
= -15V
V
GS
= -10V, V
DS
= -15V
V
GS
= -4.5V, I
D
= -50mA
V
GS
= -10V, I
D
= -100mA
V
GS
= -10V, I
D
= -100mA
V
DS
= -15V, I
D
= -100mA
Change in V
GS(th)
with Temperature
Gate Body Leakage
-4.8
mV/
°
C
-100
nA
Zero Gate Voltage Drain Current
-10
μ
A
I
D(ON)
ON-State Drain Current
-75
-200
R
DS(ON)
35
30
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Change in R
DS(ON)
with Temperature
Forward Transconductance
0.75
%/
°
C
150
320
m
Input Capacitance
190
Common Source Output Capacitance
75
pF
Reverse Transfer Capacitance
20
Turn-ON Delay Time
10
Rise Time
25
Turn-OFF Delay Time
45
Fall Time
25
Diode Forward Voltage Drop
-1.8
V
V
GS
= 0V, I
SD
= -100mA
V
GS
= 0V, I
SD
= -100mA
Reverse Recovery Time
300
ns
Notes:
1. All D.C. parameters 100% tested at 25
°
C unless otherwise stated. (Pulse test: 300
μ
s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
mA
Drain-to-Source
Breakdown Voltage
Static Drain-to-Source
ON-State Resistance
-1 mA
V
V
GS
= 0V, I
D
= -250
μ
A
V
GS
= 0V, V
DS
=- 25V
f = 1 MHz
V
DD
= -25V
I
D
= -200mA
R
GEN
= 25
ns
VP2450
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