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參數(shù)資料
| 型號(hào)： | VP3203 |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | P-Channel Enhancement-Mode Vertical DMOS FET(擊穿電壓-30V,0.6Ω，P溝道增強(qiáng)型垂直DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管) |
| 中文描述： | P通道增強(qiáng)模式垂直的DMOS場(chǎng)效應(yīng)管（擊穿電壓- 30V的，0.6Ω，P溝道增強(qiáng)型垂直的DMOS結(jié)構(gòu)場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | VP3203 |
7-263
9
7
BV
DSS
/
BV
DGS
-30V
R
DS(ON)
(max)
I
D(ON)
(min)
Order Number / Package
TO-92
TO-243AA*
Die
0.6
-4.0A
VP3203N3
VP3203N8
VP3203ND
*Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
MIL visual screening available.
VP3203
Ordering Information
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
P-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Note: See Package Outline section for dimensions.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage
BV
DSS
BV
DGS
±
20V
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
-55
°
C to +150
°
C
Soldering Temperature*
300
°
C
* Distance of 1.6 mm from case for 10 seconds.
TO-92
S G D
TO-243AA
(SOT-89)
G
D
S
D
Product marking for TO-243AA:
VP2L*
Where *= 2-week alpha date code
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VP3203 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP3203N3 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP3203N8 | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP3203ND | P-Channel Enhancement-Mode Vertical DMOS FETs |
| VP5002BJ111H00 | VP50 PROPORTIONAL VALVE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VP3203N3 | 功能描述:MOSFET 30V 0.6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP3203N3-G | 功能描述:MOSFET 30V 0.6Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VP3203N3-G P002 | 制造商:Supertex Inc 功能描述:Trans MOSFET P-CH 30V 0.65A 3-Pin TO-92 T/R 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VP3203N3-G P003 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
| VP3203N3-G P005 | 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET |
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