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參數(shù)資料
| 型號： | VP2410L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel Enhancement-Mode MOSFET Transistor(最小漏源擊穿電壓-240V，夾斷電流-0.18A的P溝道增強型MOSFET晶體管) |
| 中文描述： | P通道增強型MOSFET晶體管（最小漏源擊穿電壓，240伏，夾斷電流，0.18A的P溝道增強型MOSFET的晶體管） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 61K |
| 代理商： | VP2410L |
VP2410L
Siliconix
S-52426—Rev. C, 14-Apr-97
3
Typical Characteristics (25 C Unless Otherwise Noted)
Ohmic Region Characteristics
Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics
On-Resistance vs. Gate-to-Source Voltage
–1
–500
0
–500
–400
0
16
14
6
2.25
2.00
0.50
0
12
14
0
–80
–100
0
–5
0
–2.0
–1
0
–5
0
–4
–20
–100
0
–500
–50
–10
150
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
–
I
D
–
I
D
–
I
D
–
r
D
V
DS
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
I
D
– Drain Current (A)
V
GS
= –4 V
–3 V
–5 V
–4.5 V
–4 V
V
GS
= –10 V
–3.0 V
–3.6 V
–3.4 V
–3.2 V
T
J
= 25 C
T
J
= 25 C
T
J
– Junction Temperature ( C)
V
GS
= –10 V
I
D
= –0.2 A
r
D
–
(
–2.8 V
–2.6 V
12
10
8
–200
–300
–400
V
GS
= –4.5 V
T
J
= 25 C
T
J
= –55 C
25 C
125 C
–300
–200
–100
–2
–3
–4
T
J
= 25 C
I
D
= –0.20 A
I
D
= –0.1 A
8
10
4
6
2
–8
–12
–16
1.75
1.50
1.25
1.00
0.75
20
70
110
V
GS
= –4.5 V
I
D
= –0.1 A
–400
–300
–200
–100
–2
–3
–4
–0.4
–0.8
–1.2
–1.6
–60
–40
–20
V
DS
= 15 V
r
D
–
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