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參數(shù)資料
| 型號： | VNP35NV04 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| 中文描述： | “OMNIFET二”：充分AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 134K |
| 代理商： | VNP35NV04 |
During
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I
iss
) flows into the Input pin in order to
supply the internalcircuitry.
The device integrates:
-
OVERVOLTAGE
CLAMP
internally set at 70V, along with the rugged
avalanche
characteristics
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductiveloads.
-
LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the
heatsink.
Both
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperaturethresholdT
jsh
.
normal
operation, the
Input
pin
is
PROTECTION:
of
the
Power
case
and
junction
-
OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperatureand are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperaturecutout occurs at
minimum 150
o
C. The device is automatically
restarted when the chip temperature falls
below 135
o
C.
-
STATUS FEEDBACK: In the case of an
overtemperature fault
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100
.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a smallincrease in R
DS(on)
).
condition,
a
Status
PROTECTION FEATURES
VNP35N07
4/11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| VNP49N04FI | Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率MOSFET) |
| VNP49N04 | Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率MOSFET) |
| VNP5N07FI | "OMNIFET": Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率MOSFET) |
| VNP5N07 | Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率MOSFET) |
| VNP7N04 | Fully Autoprotected Power MOSFET(全自動(dòng)保護(hù)功率MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VNP35NV04-E | 功能描述:電源開關(guān) IC - 配電 N-Ch 70V 35A OmniFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VNP49N04 | 功能描述:MOSFET N-Ch 42V 49A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNP49N04-E | 功能描述:MOSFET N-Ch 42V 49A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNP49N04FI | 功能描述:MOSFET N-Ch 42V 49A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNP49N04FI-E | 功能描述:MOSFET N-Ch 42V 49A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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