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參數(shù)資料
| 型號： | VNP35NV04 |
| 廠商： | 意法半導體 |
| 英文描述： | “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET |
| 中文描述： | “OMNIFET二”：充分AUTOPROTECTED功率MOSFET |
| 文件頁數(shù)： | 11/11頁 |
| 文件大小： | 134K |
| 代理商： | VNP35NV04 |
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consequencesof use ofsuch informationnor for any infringement of patentsor otherrights of third parties whichmay resultsfrom its use. No
license is grantedby implicationor otherwise underany patent or patentrights ofSGS-THOMSON Microelectronics. Specifications mentioned
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SGS-THOMSONMicroelectronics productsare notauthorized for useascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
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VNP35N07
11/11
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| VNP49N04 | Fully Autoprotected Power MOSFET(全自動保護功率MOSFET) |
| VNP5N07FI | "OMNIFET": Fully Autoprotected Power MOSFET(全自動保護功率MOSFET) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| VNP35NV04-E | 功能描述:電源開關(guān) IC - 配電 N-Ch 70V 35A OmniFET RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關(guān)閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| VNP49N04 | 功能描述:MOSFET N-Ch 42V 49A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNP49N04-E | 功能描述:MOSFET N-Ch 42V 49A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNP49N04FI | 功能描述:MOSFET N-Ch 42V 49A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| VNP49N04FI-E | 功能描述:MOSFET N-Ch 42V 49A OmniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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