參數(shù)資料
型號: VNP10N06FI
廠商: 意法半導(dǎo)體
英文描述: “OMNIFET ”:Fully Autoprotected Power MOSFET(全自動保護功率MOSFET)
中文描述: “OMNIFET”:充分Autoprotected功率MOSFET(全自動保護功率MOSFET的)
文件頁數(shù): 4/14頁
文件大小: 167K
代理商: VNP10N06FI
PROTECTION FEATURES
During Normal Operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path
as soon as V
IN
> V
IH
.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC
to 50KHz. The only difference from the user’s
standpoint is that a small DC current (typically
150
μ
A) flows into the INPUT pin in order to
supply the internal circuitry.
During turn-off of an unclamped inductive load
the output voltage is clamped to a safe level by
an integrated Zener clamp between DRAIN pin
and the gate of the internal PowerMOSFET.
In this condition, the Power MOSFET gate is set
to a voltage high enough to sustain the inductive
load current even if the INPUTpin is driven to 0V.
The device integrates an active current limiter
circuit which limits the drain current I
D
to I
lim
whateverthe INPUTpin Voltage.
When the current limiter is active, the device
operatesin thelinear region, so power dissipation
may exceed the heatsinkingcapability. Both case
and junction temperatures increase, and if this
phase lasts long enough, junction temperature
may reach the overtemperaturethreshold T
jsh
.
If T
j
reaches T
jsh
, the device shuts down
whatever the INPUT pin voltage. The device will
restart automatically when T
j
has cooled down to
T
jrs
VND10N06/VND10N06-1/VNP10N06FI/VNK10N06FM
4/14
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