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參數(shù)資料
| 型號： | VND5025LAK-E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Double channel high side driver with analog current sense for automotive applications |
| 中文描述： | 雙通道模擬汽車應(yīng)用的電流檢測的高邊驅(qū)動器 |
| 文件頁數(shù)： | 22/31頁 |
| 文件大?。?/td> | 319K |
| 代理商： | VND5025LAK-E |
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Application information
VND5025LAK-E
22/31
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor, then ST suggests to utilize the following Solution 2.
3.1.2
Solution 2: Diode (D
GND
) in the ground line
If the device drives an inductive load, insert a resistor (R
GND
= 1k
) in parallel to D
GND
.
This small signal diode can be safely shared among several different HSDs. Also in this
case, the presence of the ground network produces a shift (
j
600mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift does not vary if more than one HSD shares the same diode/resistor
network.
3.2
Load dump protection
D
ld
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
V
CC
maximum DC rating. The same applies if the device is subject to transients on the V
CC
line that are greater than the ones shown in the ISO 7637-2:2004E table.
3.3
μC I/Os protection
If a ground protection network is used and negative transients are present on the V
CC
line,
the control pins are pulled negative. ST suggests to insert an in-line resistor (R
prot
) to
prevent the μC I/Os pins from latch-up.
The value of these resistors is a compromise between the leakage current of μC and the
current required by the HSD I/Os (input levels compatibility) with the latch-up limit of μC
I/Os.
-V
CCpeak
/I
latchup
≤
R
prot
≤
(V
OHμC
-V
IH
-V
GND
) / I
IHmax
Calculation example:
For V
CCpeak
= -100V and I
latchup
≥
20mA; V
OHμC
≥
4.5V
5k
≤
R
prot
≤
65k
Recommended values: R
prot
= 10k
, C
EXT
= 10nF
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| VND5025LAKTR-E | 功能描述:功率驅(qū)動器IC DOUBLE CH HI-SIDE DR W/ANALOG CRRNT SNSE RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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| VND5050AJ-E_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Double channel high side driver with analog current sense for automotive applications |
| VND5050AJTR-E | 功能描述:功率驅(qū)動器IC Double Ch Hi Side Driver analog RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| VND5050AK-E | 功能描述:功率驅(qū)動器IC Double Ch Hi Side Driver analog RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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