- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359335 > V826664G24S (Mosel Vitelic, Corp.) 512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64 PDF資料下載
參數(shù)資料
| 型號： | V826664G24S |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64 |
| 中文描述： | 512 MB的200 - pin的DDR SODIMM內(nèi)存2.5伏的緩沖6400 × 64 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 199K |
| 代理商： | V826664G24S |
MOSEL VITELIC
V826664G24S
11
V826664G24S Rev. 1.0 August 2002
AC Characteristics (cont.)
Notes:
1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter.
2. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, CS, RAS, CAS, WE.
3. For command/address input slew rate >=1.0V/ns
4. For command/address input slew rate >=0.5V/ns and <1.0V/ns
5. CK, CK slew rates are >=1.0V/ns
6. These parameters guarantee device timing, but they are not necessarily tested on each device, and they may be guaranteed
by design or tester correlation.
7. Data latched at both rising and falling edges of Data Strobes(DQS) : DQ, DM
8. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete
Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM.
Absolute Maximum Ratings
Note:
Operation at above absolute maximum rating can adversely affect device reliability
Write DQS Preamble Hold Time
t
WPREH
0.25
-
0.25
-
0.25
-
0.25
-
CLK
Write DQS Postamble Time
t
WPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
CLK
Mode Register Set Delay
t
MRD
2
-
2
-
2
-
2
-
CLK
Power Down Exit Time
t
PDEX
10
-
10
-
10
-
10
-
ns
Exit Self Refresh to Non-Read Command
t
XSNR
75
-
75
-
75
-
80
-
ns
Exit Self Refresh to Read Command
t
XSRD
200
-
200
-
200
-
200
-
CLK
8
Average Periodic Refresh Interval
t
REFI
-
7.8
-
7.8
-
7.8
-
7.8
us
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
°C
Storage Temperature
T
STG
-55 ~ 125
°C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
relative to V
SS
V
DD
-0.5 ~ 3.6
V
Voltage on V
DDQ
relative to V
SS
V
DDQ
-0.5 ~ 3.6
V
Output Short Circuit Current
I
OS
50
mA
Power Dissipation
P
D
16
W
Soldering Temperature Time
T
SOLDER
260 10
°C Sec
Parameter
Symbol
(PC333)
(PC266A)
(PC266B)
(PC200)
Unit Note
Min
Max
Min
Max
Min
Max
Min
Max
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V827316K04S | 2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332K04S | 2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332N04S | 2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
| V827464K24S | 2.5 VOLT 64M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827464N24S | 2.5 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V826664K24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V827316K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE |
| V827332N04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
| V827332U04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。