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參數(shù)資料
| 型號： | V826516K04S |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| 中文描述： | 2.5伏特16米x 64高性能無緩沖DDR SDRAM內存模塊 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大小： | 159K |
| 代理商： | V826516K04S |
4
V826516K04S Rev. 1.1 March 2002
MOSEL VITELIC
V826516K04S
Serial Presence Detect Information
Bin Sort:
B1
(PC266A @ CL = 2)
B0
(PC266B @ CL = 2.5)
A1
(PC200 @ CL = 2)
Byte #
Function described
Function Supported
Hex value
A1
B0
B1
A1
B0
B1
0
Defines # of Bytes written into serial memory at module manufacturer
128bytes
80h
1
Total # of Bytes of SPD memory device
256bytes
08h
2
Fundamental memory type
SDRAM DDR
07h
3
# of row address on this assembly
12
0Ch
4
# of column address on this assembly
10
0Ah
5
# of module Rows on this assembly
1 Bank
01h
6
Data width of this assembly
64 bits
40h
7
.........Data width of this assembly
-
00h
8
VDDQ and interface standard of this assembly
SSTL 2.5V
04h
9
DDR SDRAM cycle time at CAS Latency =2.5
8ns
7.5ns
7ns
80h
75h
70h
10
DDR SDRAM Access time from clock at CL=2.5
±0.8ns ±0.75ns ±0.70ns
80h
75h
70h
11
DIMM configuration type(Non-parity, Parity, ECC)
Non-parity,
00h
12
Refresh rate & type
15.6us & Self refresh
80h
13
Primary DDR SDRAM width
x8
08h
14
Error checking DDR SDRAM data width
N/A
00h
15
Minimum clock delay for back-to-back random column
address
t
CCD
=1CLK
01h
16
DDR SDRAM device attributes : Burst lengths supported
2,4,8
0Eh
17
DDR SDRAM device attributes : # of banks on each DDR SDRAM
4 banks
04h
18
DDR SDRAM device attributes : CAS Latency supported
2,2.5
0Ch
19
DDR SDRAM device attributes : CS Latency
0CLK
01h
20
DDR SDRAM device attributes : WE Latency
1CLK
02h
21
DDR SDRAM module attributes
Differential clock / non
Registered
20h
22
DDR SDRAM device attributes : General
+/-0.2V voltage tolerance
00h
23
DDR SDRAM cycle time at CL =2
10ns
10ns
7.5ns
A0h
A0h
75h
24
DDR SDRAM Access time from clock at CL =2
±0.8ns ±0.8ns ±0.75ns
80h
80h
75h
25
DDR SDRAM cycle time at CL =1.5
-
-
-
00h
26
DDR SDRAM Access time from clock at CL =1.5
-
-
-
00h
27
Minimum row precharge time (=t
RP
)
20ns
20ns
18ns
50h
50h
48h
28
Minimum row activate to row active delay(=t
RRD
)
15ns
15ns
14ns
3Ch
3Ch
38h
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PDF描述 |
|---|---|
| V826532K04S | 2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V82658B04S | 64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64 |
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| V826632B24S | 256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64 |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| V826532K04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V82658B04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64 |
| V82658J04S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:2.5 VOLT 8M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE |
| V826632B24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64 |
| V826632G24S | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64 |
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