參數(shù)資料
型號(hào): V55C3256164VBLG10IPC
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: SYNCHRONOUS DRAM, PBGA54
封裝: ROHS COMPLIANT, MO-210, FBGA-54
文件頁(yè)數(shù): 14/46頁(yè)
文件大?。?/td> 575K
代理商: V55C3256164VBLG10IPC
21
V55C3256164VB Rev. 1.0 March 2008
ProMOS TECHNOLOGIES
V55C3256164VB
5. Burst Write Operation
(Burst Length = 4, CAS latency = 2, 3)
6.1 Write Interrupted by a Write
(Burst Length = 4, CAS latency = 2, 3)
COMMAND
NOP
WRITE A
NOP
I/O’s
DIN A0
DIN A1
DIN A2
DIN A3
NOP
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
Extra data is ignored after
The first data element and the Write
are registered on the same clock edge.
termination of a Burst.
don’t care
COMMAND
NOP
WRITE A
WRITE B
NOP
I/O’s
DIN A0
DIN B0
DIN B1
DIN B2
NOP
DIN B3
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
1 Clk Interval
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