參數(shù)資料
型號(hào): V54C365164VEF6
廠商: PROMOS TECHNOLOGIES INC
元件分類: DRAM
英文描述: 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
封裝: LEAD FREE, MO-210, FBGA-60
文件頁數(shù): 16/54頁
文件大?。?/td> 694K
代理商: V54C365164VEF6
23
V54C365(16/80/40)4VE Rev. 1.1 January 2005
ProMOS TECHNOLOGIES
V54C365(16/80/40)4VE
4.2 Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2)
4.3 Non-Minimum Read to Write Interval
(Burst Length = 4, CAS latency = 2, 3)
COMMAND
NOP
BANK A
NOP
READ A
WRITE A
NOP
DQM
DIN A0
DIN A1
DIN A2
DIN A3
Must be Hi-Z before
the Write Command
tCK2, I/O’s
CAS latency = 2
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
ACTIVATE
1 Clk Interval
tDQZ
tDQW
: “H” or “L”
NOP
READ A
NOP
READ A
NOP
WRITE B
NOP
DQM
DIN B0
DIN B1
DIN B2
tCK1, I/O’s
CAS latency = 2
tCK2, I/O’s
CAS latency = 3
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT A0
COMMAND
DIN B0
DIN B1
DIN B2
DOUT A1
DOUT A0
Must be Hi-Z before
the Write Command
tDQZ
tDQW
: “H” or “L”
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