1
V54C465164VE
64Mbit SDRAM
3 VOLT, TSOP II / FBGA
4M X 16
V54C465164VE Rev. 1.4 May 2006
6
7PC
7
8PC
System Frequency (fCK)
166 MHz
143 MHz
125 MHz
Clock Cycle Time (tCK3)
6 ns
7 ns
8 ns
Clock Access Time (tAC3) CAS Latency = 3
5.4 ns
6 ns
Clock Access Time (tAC2) CAS Latency = 2
5.4 ns
6 ns
Features
■ 4 banks x 1Mbit x 16 organization
■ High speed data transfer rates up to 166 MHz
■ Full Synchronous Dynamic RAM, with all signals
referenced to clock rising edge
■ Single Pulsed RAS Interface
■ Data Mask for Read/Write Control
■ Four Banks controlled by BA0 & BA1
■ Programmable CAS Latency: 2, 3
■ Programmable Wrap Sequence: Sequential or
Interleave
■ Programmable Burst Length:
1, 2, 4, 8, and full page for Sequential Type
1, 2, 4, 8 for Interleave Type
■ Multiple Burst Read with Single Write Operation
■ Automatic and Controlled Precharge Command
■ Random Column Address every CLK (1-N Rule)
■ Power Down Mode
■ Auto Refresh and Self Refresh
■ Refresh Interval: 4096 cycles/64 ms
■ Available in 54-ball FBGA and 54-Pin TSOPII
■ LVTTL Interface
■ Single +3.0 V
±0.3 V Power Supply
Description
The V54C465164VE is a four bank Synchronous
DRAM organized as 4 banks x 1Mbit x 16. The
V54C465164VE achieves high speed data transfer
rates up to 166 MHz by employing a chip architec-
ture that prefetches multiple bits and then synchro-
nizes the output data to a system clock
All of the control, address, data input and output
circuits are synchronized with the positive edge of
an externally supplied clock.
Operating the four memory banks in an inter-
leaved fashion allows random access operation to
occur at higher rate than is possible with standard
DRAMs. A sequential and gapless data rate of up to
166 MHz is possible depending on burst length,
CAS latency and speed grade of the device.
Device Usage Chart
Operating
Temperature
Range
Package Outline
Access Time (ns)
Power
Temperature
Mark
C/S/T
6
7PC
7
8PC
Std.
L
0
°C to 70°C
Blank