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參數(shù)資料
| 型號： | V29C51001B |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 1 MEGA Bit 5 Volt CMOS Flash Memory(1M位5V CMOS閃速存儲器) |
| 中文描述： | 1兆的5伏的CMOS快閃記憶體（100萬位5V的CMOS閃速存儲器） |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 82K |
| 代理商： | V29C51001B |
10
MOSEL V ITELIC
V29C51001T/V29C51001B
V29C51001T/V29C51001B Rev. 0.4 February 1999
NOTES:
1.
2.
X = Don’t Care, V
IH
= HIGH, V
IL
= LOW. V
H
= 12.5V Max.
PD: The data at the byte address to be programmed.
Table 2. Command Codes
NOTES:
1.
2.
3.
4.
Top Boot Sector
Bottom Boot Sector
PA: The address of the memory location to be programmed.
PD: The data at the byte address to be programmed.
Disabling Boot Block Protection Lock
V
H
V
H
V
IL
X
X
V
H
X
Output Disable
V
IL
V
IH
V
IH
X
X
X
HIGH-Z
Command
Sequence
First Bus
Program Cycle
Second Bus
Program Cycle
Third Bus
Program Cycle
Fourth Bus
Program Cycle
Fifth Bus
Program Cycle
Six Bus
Program Cycle
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
Read
XXXXH
F0H
Read
5555H
AAH
2AAAH
55H
5555H
F0H
RA
RD
Autoselect
5555H
AAH
2AAAH
55H
5555H
90H
00H
40H
01H
01H
(1)
A1H
(2)
Byte
Program
5555H
AAH
2AAAH
55H
5555H
A0H
PA
PD(4)
Chip Erase
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
10H
Sector Erase
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
PA(3)
30H
Decoding Mode
CE
OE
WE
A
0
A
1
A
9
I/O
Chip Erase Cycle
The V29C51001T/V29C51001B features a chip-
erase operation. The chip erase operation is
initiated by using a specific six-bus-cycle
sequence: two unlock program cycles, a setup
command, two additional unlock program cycles,
and the chip erase command (see Table 2).
The chip erase operation is performed
sequentially, one sector at a time. When the
automated on chip erase algorithm is requested
with the chip erase command sequence, the device
automatically programs and verifies the entire
memory array for an all zero pattern prior to erasure
The automatic erase begins on the rising edge of
the last WE or CE pulse in the command sequence
and terminates when the data on DQ7 is “1”.
Program Cycle Status Detection
There are two methods for determining the state
of the V29C51001T/V29C51001B during a
program (erase/program) cycle: DATA Polling
(I/O
7
) and Toggle Bit (I/O
6
).
DATA Polling (I/O
7
)
The V29C51001T/V29C51001B features DATA
polling to indicate the end of a program cycle.
When the device is in the program cycle, any
attempt to read the device will received the
complement of the loaded data on I/O
7
. Once the
program cycle is completed, I/O
7
will show true
data, and the device is then ready for the next
cycle.
Toggle Bit (I/O
6
)
The V29C51001T/V29C51001B also features
another method for determining the end of a
program cycle. When the device is in the program
cycle, any attempt to read the device will result in
l/O
6
toggling between 1 and 0. Once the program is
completed, the toggling will stop. The device is then
ready for the next operation. Examining the toggle
bit may begin at any time during a program cycle.
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| V29C51001B-45J | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY |
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| V29C51001B-70P | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY |
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