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參數(shù)資料
| 型號： | UPD444008LLE-A10 |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT |
| 中文描述： | 4分位CMOS快速靜態(tài)存儲器為512k - Word的8位 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 102K |
| 代理商： | UPD444008LLE-A10 |
4
μ
PD444008L
Data Sheet M14429EJ4V0DS
Electrical Specifications
Absolute Maximum Ratings
Parameter
Symbol
Condition
Rating
Unit
Supply voltage
V
CC
–0.5
Note
to +4.0
V
Input / Output voltage
V
T
–0.5
Note
to +4.0
V
Operating ambient temperature
T
A
0 to 70
°
C
Storage temperature
T
stg
–55 to +125
°
C
Note
–2.0 V (MIN.) (pulse width : 2 ns)
Caution
Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Supply voltage
V
CC
3.0
3.3
3.6
V
High level input voltage
V
IH
2.0
V
CC
+0.3
V
Low level input voltage
V
IL
–0.3
Note
+0.8
V
Operating ambient temperature
T
A
0
70
°
C
Note
–2.0 V (MIN.) (pulse width : 2 ns)
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|---|---|
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