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參數(shù)資料
| 型號： | UPD444008LLE-A10 |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT |
| 中文描述： | 4分位CMOS快速靜態(tài)存儲器為512k - Word的8位 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 102K |
| 代理商： | UPD444008LLE-A10 |
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1999
MOS INTEGRATED CIRCUIT
μ
PD444008L
4M-BIT CMOS FAST SRAM
512K-WORD BY 8-BIT
DATA SHEET
Document No. M14429EJ4V0DS00 (4th edition)
Date Published May 2002 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The
μ
PD444008L is a high speed, low power, 4,194,304 bits (524,288 words by 8 bits) CMOS static RAM.
Operating supply voltage is 3.3 V
±
0.3 V.
The
μ
PD444008L is packaged in 36-pin PLASTIC SOJ.
Features
524,288 words by 8 bits organization
Fast access time : 8, 10, 12, ns (MAX.)
Output Enable input for easy application
Single +3.3 V power supply
Ordering Information
Part number
Package
Access time
Supply current mA (MAX.)
ns (MAX.)
At operating
At standby
μ
PD444008LLE-A8
36-pin PLASTIC SOJ
8
185
5
μ
PD444008LLE-A10
(10.16 mm (400))
10
165
μ
PD444008LLE-A12
12
155
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPD444008LLE-A12 | 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT |
| UPD444008LLE-A8 | 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT |
| UPD444008L | 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT |
| UPD4443362 | 4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE |
| UPD4443362GF-A75 | 4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD444008LLE-A10(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| UPD444008LLE-A12-A | 制造商:Renesas Electronics 功能描述:12ns 3.3V Cut Tape |
| UPD444012AGY-B70X-MJH(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| UPD444012AGY-B85X-MJH-A | 制造商:Renesas Electronics 功能描述:85ns 3.3V Cut Tape |
| UPD444012AGY-C70X-MJH(A) | 制造商:Renesas Electronics Corporation 功能描述: |
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