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參數(shù)資料
| 型號(hào)： | UPD444004LLE-A12 |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT |
| 中文描述： | 4分位CMOS快速靜態(tài)存儲(chǔ)器100萬(wàn)字的4位 |
| 文件頁(yè)數(shù)： | 7/16頁(yè) |
| 文件大小： | 100K |
| 代理商： | UPD444004LLE-A12 |
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7
μ
PD444004L
Data Sheet M14427EJ4V0DS
Read Cycle
Parameter
Symbol
-A8
-A10
-A12
Unit
Notes
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Read cycle time
t
RC
8
10
12
ns
Address access time
t
AA
8
10
12
ns
1
/CS access time
t
ACS
8
10
12
ns
/OE access time
t
OE
4
5
6
ns
Output hold from address change
t
OH
3
3
3
ns
/CS to output in low impedance
t
CLZ
3
3
3
ns
2, 3
/OE to output in low impedance
t
OLZ
0
0
0
ns
/CS to output in high impedance
t
CHZ
4
5
6
ns
/OE to output hold in high impedance
t
OHZ
4
5
6
ns
Notes
1.
See the output load shown in
Figure 1
.
2.
Transition is measured at
±
200 mV from steady-state voltage with the output load shown in
Figure 2
.
3.
These parameters are periodically sampled and not 100% tested.
Read Cycle Timing Chart 1 (Address Access)
t
OH
t
RC
t
AA
Address (Input)
I/O (Output)
Previous data out
Data out
Remarks 1.
In read cycle, /WE should be fixed to high level.
2.
/CS = /OE = V
IL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPD444004LLE-A8 | 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT |
| UPD444004L | 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT |
| UPD444008LLE-A10 | 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT |
| UPD444008LLE-A12 | 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT |
| UPD444008LLE-A8 | 4M-BIT CMOS FAST SRAM 512K-WORD BY 8-BIT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD444008LE-12-A | 制造商:Renesas Electronics 功能描述:12ns 5V Cut Tape |
| UPD444008LLE-A10(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| UPD444008LLE-A12-A | 制造商:Renesas Electronics 功能描述:12ns 3.3V Cut Tape |
| UPD444012AGY-B70X-MJH(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| UPD444012AGY-B85X-MJH-A | 制造商:Renesas Electronics 功能描述:85ns 3.3V Cut Tape |
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