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參數(shù)資料
| 型號： | UPD444004L |
| 廠商： | NEC Corp. |
| 英文描述： | 4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT |
| 中文描述： | 4分位CMOS快速靜態(tài)存儲器100萬字的4位 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 100K |
| 代理商： | UPD444004L |
6
μ
PD444004L
Data Sheet M14427EJ4V0DS
AC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
AC Test Conditions
Input Waveform (Rise and Fall Time
≤
3 ns)
Test Points
GND
3.0 V
1.5 V
1.5 V
Output Waveform
Test Points
1.5 V
1.5 V
Output Load
AC characteristics directed with the note should be measured with the output load shown in
Figure 1
or
Figure 2
.
Figure 1
Figure 2
(t
AA
, t
ACS
, t
OE
, t
OH
)
(t
CLZ
, t
OLZ
, t
CHZ
, t
OHZ
, t
WHZ
, t
OW
)
V
TT
= +1.5 V
I/O (Output)
50
Z
O
= 50
30 pF
C
L
+3.3 V
I/O (Output)
317
5 pF
C
L
351
Remark
C
L
includes capacitances of the probe and jig, and stray capacitances.
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| UPD444004LE-12-A | 制造商:Renesas Electronics Corporation 功能描述: |
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