參數(shù)資料
型號(hào)： UPD44164182F5-E40-EQ1
廠商： NEC Corp.
英文描述： 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
中文描述： 1800萬(wàn)位的SRAM 2條DDRII字爆發(fā)運(yùn)作
文件頁(yè)數(shù)： 23/32頁(yè)
文件大小： 282K
代理商： UPD44164182F5-E40-EQ1
23
Data Sheet M15821EJ7V2DS
μ
PD44164082, 44164182, 44164362
TAP Controller State Diagram
Test-Logic-Reset
Run-Test / Idle
Select-DR-Scan
Capture-DR
Capture-IR
Shift-DR
Exit1-DR
Pause-DR
Exit2-DR
Update-DR
Update-IR
Exit2-IR
Pause-IR
Exit1-IR
Shift-IR
Select-IR-Scan
0
0
0
1
0
1
1
0
0
1
0
1
1
0
0
0
0
1
0
1
0
1
1
1
0
1
1
0
1
0
1
1
Disabling the Test Access Port
It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal
operation of the device, TCK must be tied to V
SS
to preclude mid level inputs.
TDI and TMS are designed so an undriven input will produce a response identical to the application of a logic 1, and
may be left unconnected. But they may also be tied to V
DD
through a 1 k
resistor.
TDO should be left unconnected.
相關(guān)PDF資料
PDF描述
UPD44164082F5-E50-EQ1 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44164182F5-E50-EQ1 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44164362F5-E50-EQ1 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44164082F5-E60-EQ1 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
UPD44164182F5-E60-EQ1 18M-BIT DDRII SRAM 2-WORD BURST OPERATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPD44164182F5-E50-EQ1 制造商:Renesas Electronics Corporation 功能描述:UPD44164182 Series 18 Mb (1 M x 18 ) 200 MHz 5 ns DDRII SRAM - BGA-165
UPD44164362F5-E60-EQ1ES 制造商:NEC Electronics Corporation 功能描述:
UPD44165092BF5-E40-EQ3-A 制造商:Renesas Electronics Corporation 功能描述:2MX9, 2BURST, 250 MHZ QDRII SRAM - Trays
UPD44165094BF5-E40-EQ3-A 制造商:Renesas Electronics Corporation 功能描述:SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 9-Bit 0.45ns 165-Pin BGA
UPD44165362BF5-E40-EQ3 制造商:Renesas Electronics Corporation 功能描述:UPD44165362BF5-E40-EQ3 - Trays
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