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參數(shù)資料
| 型號： | UPD16823GS |
| 廠商： | NEC Corp. |
| 英文描述： | MONOLITHIC H BRIDGE DRIVER |
| 中文描述： | 單片電路H橋驅動器 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 71K |
| 代理商： | UPD16823GS |
μ
PD16823
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Condition
Ratings
Unit
(Positive) supply voltage
V
DD
When charge pump operates
–0.5 to +6.5
V
When charge pump does not operate
–0.5 to +8.0
V
V
M
–0.5 to +8.0
V
Gate drive voltage
V
G
15
V
Input voltage
V
IN
–0.5 to V
DD
+ 0.5
V
H bridge drive current
Positive: MOS output stage forward current
Negative: Output stage diode current
I
DR
DC
±
0.5
A
PW
≤
200 ms, duty cycle
≤
50%
±
1.0
A
PW
≤
200 ms, single pulse
±
3.0
A
Power dissipation
P
D
1.0
W
Operating temperature
T
A
–30 to +60
°
C
Junction temperature
T
j(peak)
150
°
C
Storage temperature
T
stg
–55 to +150
°
C
RECOMMENDED OPERATING CONDITIONS (T
A
= 25
°
C)
Parameter
Symbol
Condition
Ratings
Unit
(Positive) supply voltage
V
DD
When charge pump operates
2.5 to 6.0
V
When charge pump does not operate
2.5 to 7.5
V
V
M
–0.5 to +7.5
V
Gate drive voltage
V
G
11 to 14
V
Junction temperature
T
j(peak)
125
°
C
ELECTRICAL CHARACTERISTICS (T
A
= –30
°
C to +60
°
C)
Parameter
Symbol
Condition
MIN.
TYP.
MAX.
Unit
V
DD
pin current
I
DD1
V
DD
= 5 V, with all control pins at high level
2.0
mA
I
DD2
V
DD
= 5 V, with all control pins at low level
10
μ
A
V
M
pin current
I
M
T
A
= 25
°
C, with all control pins at low level
1.0
μ
A
With all control pins at low level
10
μ
A
H bridge ON resistance
R
ON
I
DR
= 0.5 A, V
DD
= V
M
= 5 V, T
A
= 25
°
C
0.6
0.8
Control pin high-level input voltage
V
IH
V
DD
×
0.6
V
Control pin low-level input voltage
V
IL
V
DD
×
0.2
V
Charge pump circuit turn-off time
t
ONC
V
DD
= V
M
= 5 V
C
1
= C
2
= C
2
= 10 nF
I
DR
= 0.5 A
1.0
ms
H bridge circuit turn-ON time
t
ONH
10
μ
s
H bridge circuit turn-OFF time
t
OFFH
5.0
μ
s
Regenerative diode voltage drop
V
F
I
F
= 0.5 A
1.0
V
Control pin input pull-down resistance
R
IN
25
50
75
k
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