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1998
DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD16837
Document No. S12764EJ1V0DS00 (1st edition)
Date Published January 1998 N CP(K)
Printed in Japan
MONOLITHIC QUAD H BRIDGE DRIVER
The information in this document is subject to change without notice.
DESCRIPTION
The
μ
PD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs
in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar
transistors.
In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning when
the supply voltage drops. A 30-pin plastic shrink SOP package is adopted to help create compact and slim application sets.
In the output stage H bridge circuits, two low-ON resistance H bridge circuits for driving actuators, and another two
channels for driving sled motors and loading motors are provided, making the product ideal for applications in CD-ROM
and DVD.
FEATURES
Four H bridge circuits employing power MOS FETs
High-speed PWM drive: Operating frequency: 120 kHz MAX.
Low-voltage malfunction prevention circuit: Operating voltage: 2.5 V (TYP.)
30-pin shrink SOP (300 mil)
ORDERING INFORMATION
Part Number
Package
μ
PD16837GS
30-pin plastic SSOP (300 mil)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Conditions
Rating
Unit
Control block supply voltage
V
DD
–0.5 to
+7.0
V
Output block supply voltage
V
M
–0.5 to
+15
V
Input voltage
V
IN
–0.5 to V
DD
+ 0.5
V
H bridge drive current
Note 1
I
DR (pulse)
PW
≤
5 ms, Duty
≤
30 %
±
1.0
A/phase
Power dissipation
Note 2
P
T
1.25
W
Operating temperature range
T
A
0 to 75
°
C
Peak junction temperature
T
CH (MAX)
150
°
C
Storage temperature range
T
stg
–55 to +150
°
C
Notes 1.
When only one channel operates.
2.
When mounted on a glass epoxy board (100 mm
×
100 mm
×
1 mm)