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參數(shù)資料
| 型號(hào)： | UPC1676PCHIP |
| 廠商： | NEC Corp. |
| 英文描述： | 1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER |
| 中文描述： | 1.2千兆赫帶寬，低噪聲硅MMIC放大器 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | UPC1676PCHIP |
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
Frequency, f (MHz)
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CC
P
T
Power Supply Voltage
Total Power Dissipation
UPC1676B/P
UPC1676G
Operating Temperature
UPC1676B/P
UPC1676G
Storage Temperature
UPC1676B/P
UPC1676G
V
6
W
mW
1.5 (T
C
= +125
°
C)
200 (T
A
= +85
°
C)
T
OP
°
C
°
C
-55 to +125
-40 to +85
T
STG
°
C
°
C
-65 to +200
-55 to +150
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
V
CC
= 5 V
0
-10
-20
-30
10 20 50 100 200 500 1000 2000
I
V
CC
OUT
GND
IN
EQUIVALENT CIRCUIT
UPC1676B, UPC1676G, UPC1676P
O
O
V
CC
= 5 V
f = 500 MHz
15
10
5
0
-5
-10
-15
-35 -30 -25 -20 -15 -10 -5
UPC1676B/P
INPUT POWER vs. OUTPUT POWER
Input Power, P
IN
(dBm)
25
20
15
10
5
0
0 1 2 3 4 5 6
Supply Voltage, V
CC
(V)
C
C
UPC1676B/P
ISOLATION vs. FREQUENCY
CIRCUIT CURRENT vs. VOLTAGE
30
20
10
0
-50
0
50
100
UPC1676G
CIRCUIT CURRENT
vs. OPERATING TEMPERATURE
C
C
Operating Temperature, T
OP
(
°
C)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPC1676P | GENERAL PURPOSE WIDE BNAD AMPLIFIER |
| UPC1676G | GENERAL PURPOSE WIDE BNAD AMPLIFIER |
| UPC1688G-T2 | 5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC |
| UPC1688G-T1 | 5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC |
| UPC1688G | 5 V, 1.1 GHz WIDE BAND AND FLAT GAIN AMPLIFIER SILICON MMIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPC1677 | 制造商:NEC 制造商全稱:NEC 功能描述:1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER |
| UPC1677B | 制造商:NEC 制造商全稱:NEC 功能描述:1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER |
| UPC1677C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| UPC1677P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| UPC1678 | 制造商:NEC 制造商全稱:NEC 功能描述:2 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER |
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