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參數(shù)資料
| 型號(hào)： | UPC1676G |
| 廠商： | NEC Corp. |
| 英文描述： | GENERAL PURPOSE WIDE BNAD AMPLIFIER |
| 中文描述： | 一般為全BNAD放大器 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | UPC1676G |
BIPOLAR ANALOG INTEGRATED CIRCUIT
μ
PC1676G
GENERAL PURPOSE WIDE BNAD AMPLIFIER
DATA SHEET
Document No. P12447EJ2V0DS00 (2nd edition)
(Previous No. IC-1891)
Date Published March 1997 N
Printed in Japan
1989
DESCRIPTION
The
μ
PC1676G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed
for use as a wide band amplifier covers from HF band to UHF band.
FEATURES
Excellent frequency response : 1.2 GHz TYP.
@ 3 dB down below flat gain.
High power gain : 22 dB TYP. @ f = 0.5 GHz.
High isolation.
Super small package.
Uni- and low voltage operation : V
CC
= 5 V
Input and output matching 50
.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Supply Voltage
Total Power Dissipation
Operating Temperature
Storage Temperature
V
CC
P
T
T
opt
T
stg
6
V
200
mW
°
C
°
C
40 to +85
55 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C, V
CC
= 5 V)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Circuit Current
I
CC
14
19
24
mA
No Signal
Power Gain
G
P
19
22
24
dB
f = 0.5 GHz
Noise Figure
NF
4.5
6.0
dB
f = 0.5 GHz
Upper Limit Operating Frequency
f
u
1.0
1.2
GHz
3 dB down below flat gain
Isolation
ISL
24
28
dB
f = 0.5 GHz
Input Return Loss
RL
in
9
12
dB
f = 0.5 GHz
Output Return Loss
RL
out
6
9
dB
f = 0.5 GHz
Maximum Output Level
P
O
3
5
dBm
f = 0.5 GHz, P
in
= 0 dBm
NEC cannot assume any responsibility for any circuits shown or represent that
they are free from patent infringement.
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| UPC1676G39 | 制造商:NEC 制造商全稱:NEC 功能描述:1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER |
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