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參數(shù)資料
| 型號(hào)： | UPA810T-A |
| 廠商： | California Eastern Laboratories |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | NPN硅高頻晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 207K |
| 代理商： | UPA810T-A |
SILICON TRANSISTOR
UPA810T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
SMALL PACKAGE STYLE:
2 NE856 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.2 dB TYP at 1 GHz
HIGH GAIN:
|S
21E
|
2
= 9.0 dB TYP at 1 GHz
EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
HIGH COLLECTOR CURRENT:
100 mA
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
(Top View)
DESCRIPTION
NEC's UPA810T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device suited for
various hand-held wireless applications.
PRELIMINARY DATA SHEET
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
2.1
±
0.1
1.25
±
0.1
0 ~ 0.1
0.15
0.9
±
0.1
0.7
2.0
±
0.2
0.65
1.3
1
2
3
4
5
6
0.2 (All Leads)
+0.10
- 0.05
Date Published: June 28, 2005
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
PART NUMBER
PACKAGE OUTLINE
UPA810T
S06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
μ
A
1.0
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
μ
A
1.0
h
FE1
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
70
120
250
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA
GHz
3.0
4.5
Cre
2
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
pF
0.7
1.5
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
=7 mA, f = 1 GHz
dB
7
9
NF
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
dB
1.2
2.5
h
FE1
/h
FE2
h
FE
Ratio:
0.85
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes: 1. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA810T-T1, 3K per reel.
h
FE1
= Smaller Value of Q
1
, or Q
2
h
FE2
= Larger Value of Q
1
or Q
2
相關(guān)PDF資料 |
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| UPA810T-T1 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
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| UPA814T | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA814T-T1-A | NPN SILICON HIGH FREQUENCY TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA810TC | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD |
| UPA810TC-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 12V 0.1A 6-Pin Case TC T/R |
| UPA810TF | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON HIGH FREQUENCY TRANSISTOR |
| UPA810TF-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:BJT |
| UPA810T-T1 | 功能描述:TRANS NPN HF FT=4.5GHZ SOT-363 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF 晶體管 (BJT) 系列:- 產(chǎn)品變化通告:Product Discontinuation 17/Dec/2010 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發(fā)射極擊穿（最大）:4.7V 頻率 - 轉(zhuǎn)換:47GHz 噪聲系數(shù)（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應(yīng)商設(shè)備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
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