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參數(shù)資料
| 型號： | UPA573T |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING |
| 中文描述： | P溝道MOS場效應管的5引腳2電路的開關(guān) |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 63K |
| 代理商： | UPA573T |
μ
PA573T
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
D
–0.3
100
80
60
40
20
0
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
D
–1
100
80
60
40
20
0
I
D
- Drain Current - mA
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
i
,
o
,
r
–0.3
40
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d
,
r
,
d
,
f
–10
300
I
D
- Drain Current - mA
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
S
–0.4
–200
V
SD
- Source to Drain Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
0
–100
–80
–60
–40
–20
V
DS
- Drain to Source Voltage - V
V
GS
= –2.5 V
Pulsed
measurement
–0.5
–1
–2
–5
–10
T
A
= –25 C
25 C
75 C
150 C
–2
–5
–10
–20
–60
V
= –4 V
Pulsed
measurement
T
A
= 150 C
–25 C
25 C
75 C
0.5
1
2
5
10
20
–1
–3
–10
–30
C
iss
C
oss
C
rss
V
DS
= –5 V
f = 1 MHz
100
50
10
t
r
t
f
t
d(on)
t
d(off)
–20
–50
–100
–300
V
DD
= –5 V
V
GS
= –5 V
R
in
= 10
–100
–30
–10
–3
–1
–0.3
–0.1
–0.5 –0.6 –0.7 –0.8 –0.9 –1.0 –1.1 –1.2 –1.3
V
GS
= 0 V
Pulsed
measurement
–1
–2
–3
–4
–5
–4.5 V
–4.0 V
–3.5 V
–3.0 V
V
GS
= –2.5 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA602T | N-CHANNEL MOS FET 6-PIN 2 CIRCUITS |
| UPA606T | N-CHANNEL MOS FET 6-PIN 2 CIRCUITS FOR SWITCHING |
| UPA611TA | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| UPA651TT | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA573T-T1-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 30V 0.1A 5-Pin SC-70 T/R |
| UPA574T(T1-A) | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 50V 0.1A 5-Pin SC-74A T/R |
| UPA600T(T1-A) | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 50V 0.1A 6-Pin SC-74 T/R |
| UPA601T(T1-A) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| UPA602T | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FET 6-PIN 2 CIRCUITS |
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