參數(shù)資料
型號: UPA573T
廠商: NEC Corp.
英文描述: P-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING
中文描述: P溝道MOS場效應(yīng)管的5引腳2電路的開關(guān)
文件頁數(shù): 2/6頁
文件大?。?/td> 63K
代理商: UPA573T
μ
PA573T
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= –30 V, V
GS
= 0
–1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
= +5 V, V
DS
= 0
+3.0
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= –3 V, I
D
= –10
μ
A
–1.6
–1.9
–2.3
V
Forward Transfer Admittance
|y
fs
|
V
DS
= –3 V, I
D
= –10 mA
20
30
S
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= –2.5 V, I
D
= –1 mA
55
100
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= –4.0 V, I
D
= –10 mA
20
25
Input Capacitance
C
iss
V
DS
= –5.0 V, V
GS
= 0, f = 1 MHz
16
pF
Output Capacitance
C
oss
13
pF
Reverse Transfer Capacitance
C
rss
2
pF
Turn-On Delay Time
t
d(on)
V
DD
= – 5 V, I
D
= –10 mA, V
GS(on)
= –5 V,
R
G
= 10
, R
L
= 500
10
ns
Rise Time
t
r
40
ns
Turn-Off Delay Time
t
d(off)
130
ns
Fall Time
t
f
80
ns
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
PG.
R
G
DUT
R
L
V
DD
τ
τ
= 1 s
Duty Cycle
1 %
0
V
GS
Gate
voltage
waveform
Drain
current
waveform
V
GS
I
D
0
10 %
V
GS(on)
I
D
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
10 %
90 %
90 %
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