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參數(shù)資料
| 型號(hào)： | UPA2710GR |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOSFET |
| 中文描述： | 開(kāi)關(guān)的P -溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 75K |
| 代理商： | UPA2710GR |
Data Sheet G15978EJ3V0DS
2
μ
PA2710GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
30 V, V
GS
= 0 V
–
1
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
=
–
10 V, I
D
=
–
1 mA
m
100
–
2.5
nA
Gate Cut-off Voltage
Note
V
GS(off)
–
1.0
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
=
–
10 V, I
D
=
–
7.5 A
14
31
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
=
–
10 V, I
D
=
–
7.5 A
4.7
5.5
m
R
DS(on)2
V
GS
=
–
4.5 V, I
D
=
–
7.5 A
6.4
9.0
m
R
DS(on)3
V
GS
=
–
4.0 V, I
D
=
–
7.5 A
7.2
11
m
Input Capacitance
C
iss
V
DS
=
–
10 V
4300
pF
Output Capacitance
C
oss
V
GS
= 0 V
1200
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
690
pF
Turn-on Delay Time
t
d(on)
V
DD
=
–
15 V, I
D
=
–
7.5 A
11
ns
Rise Time
t
r
V
GS
=
–
10 V
22
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
420
ns
Fall Time
t
f
240
ns
Total Gate Charge
Q
G
V
DD
=
–
24 V
97
nC
Gate to Source Charge
Q
GS
V
GS
=
–
10 V
12
nC
Gate to Drain Charge
Q
GD
I
D
=
–
15 A
29
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 15 A, V
GS
= 0 V
0.79
V
Reverse Recovery Time
t
rr
I
F
= 15 A, V
GS
= 0 V
119
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
μ
s
84
nC
Note
Pulsed PW
≤
350
μ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG
L
V
DD
V
GS
=
–
20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS(
)
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1%
μ
V
GS
Wave Form
V
DS
Wave Form
V
GS(
)
10%
90%
V
GS
10%
0
V
DS(
)
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
V
DS
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
=
2 mA
#
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