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參數(shù)資料
| 型號(hào)： | UPA1970TE |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 68K |
| 代理商： | UPA1970TE |
Data Sheet G15934EJ1V0DS
5
μ
PA1970
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0
40
80
120
160
0.01
0.1
1
10
V
GS
= 4.5 V
Pulsed
25
°
C
25
°
C
T
A
= 125
°
C
75
°
C
0
40
80
120
160
0.01
0.1
1
10
V
GS
= 4.0 V
Pulsed
25
°
C
25
°
C
T
A
= 125
°
C
75
°
C
R
D
I
D
- Drain Current - A
R
D
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
SWITCHING CHARACTERISTICS
R
D
0
40
80
120
160
0.01
0.1
1
10
V
GS
= 2.5 V
Pulsed
25
°
C
25
°
C
T
A
= 125
°
C
75
°
C
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
10
100
1000
0.1
1
10
V
DD
= 10 V
V
GS
= 4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
f
t
r
I
D
- Drain Current - A
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
C
i
,
o
,
r
10
100
1000
0.1
1
10
100
V
GS
= 0 V
f = 1.0 MHz
C
iss
C
oss
C
rss
I
F
0.01
0.1
1
10
0.4
0.6
0.8
1
1.2
V
GS
= 0 V
Pulsed
V
DS
- Drain to Source Voltage - V
V
F(S-D)
- Source to Drain Voltage - V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1970TE-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
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| UPA1980TE | 制造商:NEC 制造商全稱:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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