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參數(shù)資料
| 型號(hào)： | UPA1915TE |
| 廠商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | UPA1915TE |
Data Sheet G14761EJ1V0DS00
4
μ
PA1915
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
T
A
= 125
C
75
C
25
C
25
C
100
80
60
40
20
0
V
GS
=
4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
T
A
= 125
C
75
C
25
C
25
C
100
80
60
40
20
0
V
GS
=
4.0 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
T
A
= 125
C
75
C
25
C
25
C
150
100
50
0
V
GS
=
2.7 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
100
I
D
- Drain Current - A
R
D
T
A
= 125
C
75
C
25
C
25
C
150
100
50
0
V
GS
=
2.5 V
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -C
I
D
=
2.5 A
50
0
50
100
150
20
60
40
100
80
R
D
-
V
GS
=
2.5 V
2.7 V
4.0 V
4.5 V
0
0
40
20
60
80
100
2
V
GS
- Gate to Source Voltage - V
4
6
8
10
12
R
D
-
I
D
=
2.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA1916 | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1916TE | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA2001C | NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY |
| UPA2002C | NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY |
| UPA2003C | NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR ARRAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA1915TE-T2-A | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA1916 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1916TE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1917 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA1917TE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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